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  • Overlay

    Overlay is a process to align the upper layer with the lower layer. The overlay error is defined as the deviation between these two layers. Overlay error measurement is an imaging process of calculating the deviation on two different overlay marks which mostly are generated by different processes and composed of different materials.

    For Overlay measurement, Box-in-Box, Frame-in-Frame, L-Bars, Circle-in-Circle, Cross-in-Cross or customized structures are supported.


    Critical Dimension

    Optical measurement is a non-contact, non-destructive measurement technique and it is precise and fast. The structure width can be calculated by extracting intensity information from images. The intensity images should be processed to prevent it from interference by noise or deformation.

    TZTEK’s metrology system provides the function to eliminate such interference. For structure width which is less than 0.7 μm, UV light can be applied.


    Film Thickness

    The system is designed to measure thickness of transparent or semitransparent dielectric film(resist) up to three layers. The automatic calibration function is integrated.

    main features

    Measurement of critical dimensions, overlay 

    Customization available for OC, SMIF and FOUP 

    Available for wafer size 200/300 mm and the combination

    Visible light and UV light are optional

    SECS/GEM

    DaVinci
    main features

    Measurement of critical dimensions, overlay

    Robot handling 

    Available for wafer size up to 200mm

    SECS/GEM

    Low long-term maintenance cost, stable and reliable

    MT3000 VIS/UV
    main features

    Measurement of film thickness and critical dimension

    Available for wafer size up to 200mm

    Automatically calibration and measurement

    SECS/GEM

    Low maintenance cost, stable and reliable

    MT2010VIS/UV
    Back
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